INTEGRATED DEVICE AND METHOD FOR FABRICATING THE INTEGRATED DEVICE

摘要

The invention relates to the field of fabricating a semiconductor integrated circuit and particularly to an integrated device and a method for fabricating the integrated device in order to address the problem that a drift area is fabricated on an epitaxial layer but the application scope of the LDMOS is limited due to the costly process of fabricating the epitaxial layer. An integrated device of an nLDMOS and a pLDMOS according to an embodiment of the invention includes a substrate and further includes an nLDMOS and a pLDMOS, where the nLDMOS and the pLDMOS are located in the substrate. The nLDMOS and the pLDMOS is located in the substrate without any epitaxial layer, thereby lowering the fabrication cost and extending the application scope.

主权项

1. An integrated device, comprising a substrate, wherein the integrated device further comprises an N-channel Laterally Double-diffused Metal Oxide Semiconductor field effect transistor, nLDMOS, and a P-channel Laterally Double-diffused Metal Oxide Semiconductor field effect transistor, pLDMOS,
wherein the nLDMOS and the pLDMOS are located in the substrate.