| 发明名称 |
Semiconductor Device with Step-Shaped Edge Termination, and Method for Manufacturing a Semiconductor Device |
| 摘要 |
A semiconductor body has a first side, second side, lateral edge, active area, edge termination between the active area and the lateral edge, and drift region of a first conductivity type. The edge termination includes a step formed in the semiconductor body between the first side and the lateral edge. The step includes a lateral surface extending up to the first side and a bottom surface extending up to the lateral edge. A first doping zone of a second conductivity type is formed in the semiconductor body along the lateral surface of the step and forms a pn-junction with the drift region. A second doping zone of the first conductivity type is formed in the semiconductor body at least along a part of the bottom surface of the step and extends up to the lateral edge, wherein the second doping zone is in contact with the drift region. |
| 申请公布号 |
US2014167143(A1) |
申请公布日期 |
2014.06.19 |
| 申请号 |
US201213713867 |
申请日期 |
2012.12.13 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
Schmidt Gerhard |
| 分类号 |
H01L29/78;H01L29/66 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
1. A semiconductor device, comprising:
a semiconductor body comprising a first side, a second side, a lateral edge delimiting the semiconductor body in a lateral direction, an active area, and an edge termination arranged between the active area and the lateral edge; a drift region of a first conductivity type formed in the semiconductor body; the edge termination comprising:
a step formed in the semiconductor body between the first side of the semiconductor body and the lateral edge, the step comprising a lateral surface extending up to the first side of the semiconductor body and a bottom surface extending up to the lateral edge of the semiconductor body;a first doping zone of a second conductivity type formed in the semiconductor body along the lateral surface of the step and forming a pn-junction with the drift region; anda second doping zone of the first conductivity type formed in the semiconductor body at least along a part of the bottom surface of the step and extending up to the lateral edge of the semiconductor body, the second doping zone being in contact with the drift region.
|
| 地址 |
Neubiberg DE |
