| 发明名称 |
POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
There is provided a power semiconductor device including: a body region having a first conductivity; a well formed in an upper portion of the body region and having a second conductivity; and a conductive via formed in the body region while traversing the well. |
| 申请公布号 |
US2014167123(A1) |
申请公布日期 |
2014.06.19 |
| 申请号 |
US201314100949 |
申请日期 |
2013.12.09 |
| 申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
KIM Kwang Soo;SUH Bum Seok;JEONG In Wha;PARK Ji Hyun;PARK Jaehoon |
| 分类号 |
H01L29/417;H01L21/28;H01L29/78 |
主分类号 |
H01L29/417 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A power semiconductor device comprising:
a body region having a first conductivity; a well formed in an upper portion of the body region and having a second conductivity; and a conductive via formed in the body region while traversing the well.
|
| 地址 |
Suwon KR |
