发明名称 |
SEMICONDUCTOR LIGHT RECEIVING DEVICE AND LIGHT RECEIVING APPARATUS |
摘要 |
A semiconductor light receiving device includes a substrate having an incident surface receiving light incident on the semiconductor light receiving device and a principal surface opposite to the incident surface; a first semiconductor layer disposed on the principal surface of the substrate, the first semiconductor layer defining one of a cathode region and an anode region; a light absorbing region disposed on the first semiconductor layer; and a second semiconductor layer disposed on the light absorbing region, the second semiconductor layer defining the other of the cathode region and the anode region and forming a junction with the light absorbing region. The light absorbing region includes a semiconductor layer having a conductivity type opposite to the conductivity type of the first semiconductor layer. The semiconductor layer of the light absorbing region forms a p-n junction with the first semiconductor layer. |
申请公布号 |
US2014167107(A1) |
申请公布日期 |
2014.06.19 |
申请号 |
US201314072463 |
申请日期 |
2013.11.05 |
申请人 |
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. ;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
YONEDA Yoshihiro;FUJII Takuya;UCHIDA Tooru |
分类号 |
H01L31/0304 |
主分类号 |
H01L31/0304 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor light receiving device comprising:
a substrate having an incident surface receiving light incident on the semiconductor light receiving device and a principal surface opposite to the incident surface; a first semiconductor layer disposed on the principal surface of the substrate, the first semiconductor layer defining one of a cathode region and an anode region; a light absorbing region disposed on the first semiconductor layer; and a second semiconductor layer disposed on the light absorbing region, the second semiconductor layer defining the other of the cathode region and the anode region and forming a junction with the light absorbing region, wherein the light absorbing region includes a semiconductor layer having a conductivity type opposite to the conductivity type of the first semiconductor layer, and the semiconductor layer of the light absorbing region forms a p-n junction with the first semiconductor layer.
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地址 |
Yokohama-shi JP |