发明名称 RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, AND POLYMER COMPOUND
摘要 PROBLEM TO BE SOLVED: To provide a resist composition which has high resolution and in which generation of defects is suppressed, a resist pattern forming method using the resist composition, and a polymer compound useful as a base material component for the resist composition.SOLUTION: The polymer compound is used which has a constituent unit represented by general formula (a0-1) and a constituent unit containing an acid-decomposable group whose polarity increases by the action of an acid. The resist composition contains the polymer compound, and the resist pattern forming method uses the resist composition. In the formula (a0-1), R is a hydrogen atom, an alkyl group, or a halogenated alkyl group; and Vais -C(=O)-O-, -C(=O)-NH-, or a divalent linking group having an aromatic hydrocarbon group.
申请公布号 JP2014112158(A) 申请公布日期 2014.06.19
申请号 JP20120266540 申请日期 2012.12.05
申请人 TOKYO OHKA KOGYO CO LTD 发明人 HIRANO TOMOYUKI;TAKAGI DAICHI;ARAI MASATOSHI;YOKOYA JIRO
分类号 G03F7/039;C08F220/26;G03F7/004 主分类号 G03F7/039
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