| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state image pickup element which includes a thin film transistor having stable electrical characteristics and which has a high potential holding function.SOLUTION: In a semiconductor device, a composition of omitting a reset transistor, which is achieved by initializing a signal charge storage part of a solid state image pickup element to cathode potential of a photoelectric conversion element is used; and by using a thin film transistor which uses an oxide semiconductor layer and an off-state current of which is 1×10A and under as a transfer transistor of the solid state image pickup element, potential of the signal charge storage part is kept constant thereby to improve a dynamic range; and by using a silicon semiconductor which enables manufacturing of a complementary metal oxide semiconductor element for a peripheral circuit, a high-speed and low power consumption semiconductor device can be manufactured. |
