发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a technology capable of improving data retention characteristics of an MRAM device by improving the resistance to an external magnetic field, in a semiconductor device including the MRAM device.SOLUTION: A magnetic shield material PM1 is arranged on a die pad DP via a die-attach film DAF1. A semiconductor chip CHP is mounted on this magnetic shield material PM1 via a die-attach film DAF2. Further, a magnetic shield material PM2 is arranged on the semiconductor chip CHP via a die-attach film DAF3. That is, the semiconductor chip CHP is arranged so as to be sandwiched between the magnetic shield material PM1 and the magnetic shield material PM2. At this time, a planar area of the magnetic shield material PM2 is smaller than that of the magnetic shield material PM1, and a thickness of the magnetic shield material PM2 is thicker than that of the magnetic shield material PM1.</p>
申请公布号 JP2014112691(A) 申请公布日期 2014.06.19
申请号 JP20130270271 申请日期 2013.12.26
申请人 RENESAS ELECTRONICS CORP 发明人 BANDO KOJI;MISUMI KAZUYUKI;AKIYAMA TATSUHIKO;IZUMI TADAO;YAMAZAKI AKIRA
分类号 H01L23/00;H01L21/56;H01L21/8246;H01L23/29;H01L23/31;H01L27/105;H01L43/02;H01L43/08 主分类号 H01L23/00
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