| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a nitride semiconductor surface emitting laser which can inhibit a memory effect occurring when an intermediate layer is Mg doped and which can inhibit decrease in luminous efficiency.SOLUTION: A surface emitting laser in which a plurality of nitride semiconductor layers including a lower reflector 102, a plurality of active layers 104 for generating gains by current injection and an upper reflector 107 are stacked on a substrate 101 comprises an n-type spacer layer 103 formed between the lower reflector and the active layer closest to the lower reflector among the plurality of active layers; a p-type space layer 106 formed between the upper reflector and the active layer closest to the upper reflector among the plurality of active layers; and intermediate layers 105 each arranged between the plurality of active layers. The intermediate layer includes at least an Mg-doped layer 105a containing Mg and an In-containing nitride semiconductor layer 105b, in which the Mg-doped layer and the In-containing nitride semiconductor layer are stacked in this order from the substrate side.</p> |
