发明名称 LATERAL BIPOLAR TRANSISTOR AND CMOS HYBRID TECHNOLOGY
摘要 A method of forming a lateral bipolar transistor includes forming a silicon on insulator (SOI) substrate having a bottom substrate layer, a buried oxide layer (BOX) on top of the substrate layer, and a silicon on insulator (SOI) layer on top of the BOX layer, forming a dummy gate and spacer on top of the silicon on insulator layer, doping the SOI layer with positive or negative ions, depositing an inter layer dielectric (ILD), using chemical mechanical planarization (CMP) to planarize the ILD, removing the dummy gate creating a gate trench which reveals the base of the dummy gate, doping the dummy gate base, depositing a layer of polysilicon on top of the SOI layer and into the gate trench, etching the layer of polysilicon so that it only covers the dummy gate base, and applying a self-aligned silicide process.
申请公布号 US2014170829(A1) 申请公布日期 2014.06.19
申请号 US201414186512 申请日期 2014.02.21
申请人 International Business Machines Corporation 发明人 Chang Josephine B.;Lauer Gen Pei;Lauer Isaac;Sleight Jeffrey W.
分类号 H01L29/66 主分类号 H01L29/66
代理机构 代理人
主权项 1. A method of forming a lateral bipolar transistor, the method comprising: forming a silicon on insulator (SOI) substrate having a bottom substrate layer, a buried oxide layer (BOX) on top of the substrate layer, and a silicon on insulator (SOI) layer on top of the BOX layer; forming a dummy gate and spacer on top of the silicon on insulator layer; initially doping the SOI layer at opposing sides of the dummy gate and spacer with positive or negative ions; depositing an interlayer dielectric (ILD); planarizing the ILD by chemical mechanical planarization (CMP); removing the dummy gate to form a gate trench which reveals only a base of the dummy gate, the base of the dummy gate comprising a portion of the SOI layer not initially doped; doping the dummy gate base; depositing a layer of polysilicon on top of the SOI layer and into the gate trench; etching the layer of polysilicon so that it only covers the dummy gate base; and applying a self-aligned silicide process.
地址 Armonk NY US