| 发明名称 |
MONOLITHIC INTEGRATION OF HETEROJUNCTION SOLAR CELLS |
| 摘要 |
A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure. |
| 申请公布号 |
US2014170807(A1) |
申请公布日期 |
2014.06.19 |
| 申请号 |
US201213718819 |
申请日期 |
2012.12.18 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BEDELL STEPHEN W.;HEKMATSHOARTABARI BAHMAN;SADANA DEVENDRA K.;SHAHIDI GHAVAM G.;SHAHRJERDI DAVOOD |
| 分类号 |
H01L31/18 |
主分类号 |
H01L31/18 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a device with integrated photovoltaic cells, comprising:
supporting a semiconductor substrate on a first handle substrate; doping the semiconductor substrate to form alternating regions with opposite conductivity; forming at least one doped layer over a first side the semiconductor substrate; and patterning a conductive material over the least one doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.
|
| 地址 |
Armonk NY US |
