发明名称 CURRENT MIRROR WITH SATURATED SEMICONDUCTOR RESISTOR
摘要 A current mirror circuit having formed in a semiconductor: a pair of transistors arranged to produce an output current through an output one of the transistors proportional to a reference current fed to an input one of the pair of transistors; a resistor comprising a pair of spaced electrodes in ohmic contact with the semiconductor, one of such pair of electrodes of the resistor being coupled to the input one of the pair of transistors; and circuitry for producing a voltage across the pair of electrodes of the resistor, such circuitry placing the resistor into saturation producing current through a region in the semiconductor between the pair of spaced ohmic contacts, such produced current being fed to the input one of the transistors as the reference current for the current mirror.
申请公布号 US2014167859(A1) 申请公布日期 2014.06.19
申请号 US201213719619 申请日期 2012.12.19
申请人 RAYTHEON COMPANY 发明人 Bettencourt John P.;DeCaro Frank J.;Tremblay John C.
分类号 G05F3/26;H03F1/00 主分类号 G05F3/26
代理机构 代理人
主权项 1. A current mirror circuit, comprising: a semiconductor having formed therein: a pair of transistors arranged to produce an output current through an output one of the transistors proportional to a reference current fed to an input one of the pair of transistors;a resistor comprising a pair of spaced electrodes in ohmic contact with the semiconductor, one of such pair of electrodes of the resistor being coupled to the input one of the pair of transistors;circuitry for producing a voltage across the pair of electrodes of the resistor to place the resistor into saturation producing a current through a region in the semiconductor between the pair of spaced ohmic contacts, such produced current being fed to the input one of the transistors as the reference current for the current mirror.
地址 Waltham MA US