发明名称 MEMORY CELL REPAIR
摘要 A repairable memory cell in accordance with one or more embodiments of the present disclosure includes a storage element positioned between a first and a second electrode, and a repair element positioned between the storage element and at least one of the first electrode and the second electrode.
申请公布号 US2014167214(A1) 申请公布日期 2014.06.19
申请号 US201314132569 申请日期 2013.12.18
申请人 MICRON TECHNOLOGY, INC. 发明人 Sills Scott E.
分类号 H01L23/525 主分类号 H01L23/525
代理机构 代理人
主权项
地址 Boise ID US
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