ELECTROSTATIC DISCHARGE RESISTANT DIODES

摘要

A diode and a method for an electrostatic discharge resistant diode. The method includes, for example, receiving a wafer. The wafer includes a silicon layer electrically isolated from a silicon substrate by a buried oxide (BOX) layer. The BOX layer is in physical contact with the silicon layer and the silicon substrate. An N-type well is implanted in the silicon substrate. Furthermore, a vertical column of P+ doped epitaxial silicon and a vertical column of N+ doped epitaxial silicon are formed over the N-type well and extend through the BOX layer and the silicon layer. Both vertical columns may form electrical junctions with the N-type well.

主权项

1. A method for forming an electrostatic discharge resistant diode, the method comprising:
receiving a wafer, the wafer including a silicon layer electrically isolated from a silicon substrate by a buried oxide (BOX) layer, the BOX layer being in physical contact with the silicon layer and the silicon substrate; implanting an N-type well in the silicon substrate; forming a first vertical column of P+ doped epitaxial silicon over the N-type well and extending through the BOX layer and the silicon layer; and forming a second vertical column of N+ doped epitaxial silicon over the N-type well and extending through the BOX layer and the silicon layer.