| 发明名称 |
POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
There is provided a power semiconductor device including a contact formed in an active region, a trench gate extendedly formed from the first region into a first termination region and formed alternately with the contact, a first conductive well formed between the contact of the active region and the trench gate, a first conductive well extending portion formed in the first termination region and a part of a second termination region, and a first conductive field limiting ring formed in the second termination region and contacting the well extending portion. |
| 申请公布号 |
US2014167150(A1) |
申请公布日期 |
2014.06.19 |
| 申请号 |
US201313871082 |
申请日期 |
2013.04.26 |
| 申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
UM Kee Ju;Song In Hyuk;Jang Chang Su;Park Jaehoon;Seo Dong Soo |
| 分类号 |
H01L29/78;H01L29/66 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A power semiconductor device, comprising:
a contact formed in an active region; a first conductive body layer and a second conductive emitter layer formed below the contact; a trench gate extendedly formed from the active region into a first termination region and formed alternately with the contact; a first conductive well formed between the contact of the active region and the trench gate; a first conductive well extending portion formed in the first termination region and a part of a second termination region; and a first conductive field limiting ring formed in the second termination region and contacting the well extending portion.
|
| 地址 |
Suwon KR |
