发明名称 CASCODE CIRCUIT DEVICE WITH IMPROVED REVERSE RECOVERY CHARACTERISTIC
摘要 A semiconductor device including: an FET; a MOSFET having a drain thereof connected with a source of the FET; a resistor having one end thereof connected with a gate of the FET and having the other end thereof connected with a source of the MOSFET; and a diode having an anode thereof connected with the gate of the FET and having a cathode thereof connected with the source of the MOSFET.
申请公布号 US2014167100(A1) 申请公布日期 2014.06.19
申请号 US201414187785 申请日期 2014.02.24
申请人 SHARP KABUSHIKI KAISHA 发明人 ICHIKAWA Yuhji
分类号 H01L29/74 主分类号 H01L29/74
代理机构 代理人
主权项 1. A semiconductor device comprising: a first field-effect transistor being of a normally-on type; a second field-effect transistor being of a normally-off type and having a drain thereof connected with a source of the first field-effect transistor; a resistor having one end thereof connected with a gate of the first field-effect transistor and having the other end thereof directly connected with a source of the second field-effect transistor; and a diode having an anode thereof connected with the gate of the first field-effect transistor and having a cathode thereof directly connected with the source of the second field-effect transistor, wherein the resistor and the diode are connected in parallel with each other such that, at a time of turning off of the semiconductor device, electric currents flow to the resistor and the diode, respectively.
地址 Osaka JP