| 发明名称 |
LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME |
| 摘要 |
A semiconductor light emitting element including, in a light extraction layer thereof, a photonic crystal periodic structure including two systems (structures) with different refractive indices. An interface between the two systems (structures) satisfies Bragg scattering conditions, and the photonic crystal periodic structure has a photonic band gap. |
| 申请公布号 |
US2014167066(A1) |
申请公布日期 |
2014.06.19 |
| 申请号 |
US201214232517 |
申请日期 |
2012.05.25 |
| 申请人 |
Kashima Yukio;Matsuura Eriko;Nishihara Hiromi;Tashiro Takaharu;Ookawa Takafumi;Hirayama Hideki;Fujikawa Sachie;Youn Sung Won;Takagi Hideki;Kamimura Ryuichiro;Osada Yamato |
发明人 |
Kashima Yukio;Matsuura Eriko;Nishihara Hiromi;Tashiro Takaharu;Ookawa Takafumi;Hirayama Hideki;Fujikawa Sachie;Youn Sung Won;Takagi Hideki;Kamimura Ryuichiro;Osada Yamato |
| 分类号 |
H01L33/32;H01L21/66 |
主分类号 |
H01L33/32 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A semiconductor light emitting element comprising, in a light extraction layer thereof, a photonic crystal periodic structure including two systems (structures) with different refractive indices, wherein
a design wavelength λ, a period a, and radius R that determine the photonic crystal periodic structure satisfy Bragg conditions at an interface between the two systems (structures), a ratio (R/a) between the period a and the radius R is a value at which the photonic crystal periodic structure has the maximum photonic band gap, and an order m of the Bragg conditions is an order m (where 1<m<5) with which light extraction efficiency at the design wavelength λ is determined to be maximum from a result of simulation analysis conducted with a FDTD method.
|
| 地址 |
Tokyo JP |
