发明名称 PHOTOVOLTAIC DEVICE WITH DOUBLE-JUNCTION
摘要 A photovoltaic device includes a substrate having a first doped-type, a first doped region having a second doped-type in the substrate, a second doped region in a portion of the first doped region and exposing the other portion of the first doped region, and a third doped region in the exposed portion of the first doped region. The polarity of the second doped-type is substantially reversed with that of the first doped-type. The second doped region has a polarity substantially identical to that of the first doped-type and a doped concentration substantially greater than that of the substrate. The third doped region has a polarity substantially identical to that of the second doped-type and a doped concentration substantially greater than that of the first doped region. The first doped-type is one of N-type and P-type, while the second doped-type is the other of P-type and N-type.
申请公布号 US2014166091(A1) 申请公布日期 2014.06.19
申请号 US201414188067 申请日期 2014.02.24
申请人 AU Optronics Corporation 发明人 HUANG MING-JENG;LIN HAN-TU
分类号 H01L31/0687 主分类号 H01L31/0687
代理机构 代理人
主权项 1. A photovoltaic device, comprising: a substrate having a first surface and an opposite, second surface, wherein the substrate has a first doped-type; a first doped region in the first surface of the substrate, wherein the first doped region has a second doped-type, and a polarity of the second doped-type is substantially reversed with a polarity of the first doped-type; a second doped region in a portion of the first doped region and exposing the other portion of the first doped region, wherein a polarity of the second doped region is substantially identical to the polarity of the first doped-type; a third doped region in the exposed portion of the first doped region, wherein a polarity of the third doped region is substantially identical to the polarity of the second doped-type and a doped concentration of the third doped region is substantially greater than a doped concentration of the first doped region; a fourth doped region in the second surface of the substrate, wherein a polarity of the fourth doped region is substantially identical to the polarity of the first doped-type, and a doped concentration of the fourth doped region is substantially greater than the doped concentration of the second doped region; a first electrode on the third doped region; and a second electrode on the fourth doped region.
地址 Hsinchu TW