<p>TSV devices with p-n junctions that are planar have superior performance in breakdown and current handling. Junction diode assembly formed In enclosed trenches occupies less chip area compared with junction-isolation diode assembly In the known art. Diode assembly fabricated with trenches formed after the junction formation reduces fabrication cost and masking steps increase process flexibility and enable asymmetrical TSV and uni-directional TSV functions.</p>
申请公布号
WO2014092752(A1)
申请公布日期
2014.06.19
申请号
WO2013US27245
申请日期
2013.02.22
申请人
DIODES INCORPORATED
发明人
EARNSHAW, JOHN;KEMPER, WOLFGANG;LIN, YEN-LI;FRENCH, MARK;BADCOCK, STEPHEN