| 摘要 |
A thin film vertical light emitting diode (VLED) structure and process are described. Features of the design include the following: bonding multiple smaller diameter LED wafers to a larger diameter carrier wafer, which reduces the per LED fabrication cost; using thin film techniques to metalize the anode and cathode and using respective annealing steps prior to photolithography patterning of LED structures; enabling the thin film process by semi-permanent bonding techniques which provide thermal and chemical stability, while allowing bond release at an opportune time by thermal, optical, or chemical means; using epitaxial substrate removal techniques to separate the entire LED film from its growth substrate; and patterning various vertical LED devices which can emit light from the n-type side (cathode), p-type side (anode), side wall, or a combination of the surfaces by using mirror layers and electrically conductive and optically transmissive layers. |
