METHOD FOR PREPARING NITROGEN-BASED DUAL ACCEPTOR CO-DOPED ZINC OXIDE THIN FILM

摘要

Disclosed is a method for preparing a nitrogen-based dual acceptor co-doped zinc oxide thin film, which comprises: placing a substrate in a reaction chamber of an atomic layer deposition device; performing multi-component composite deposition, the composite deposition comprising introducing As-doping source deposition for one time before zinc source deposition and introducing nitrogen-doping source deposition for one time before oxygen source deposition; and performing cyclic deposition of the multi-component complex, to obtain an N-As dual acceptor co-doped zinc oxide thin film prepared through atomic layer deposition. In the method for preparing a nitrogen-based dual acceptor co-doped zinc oxide thin film provided by the present invention, co-doping of a whole thin film structure is completed to achieve N-As dual acceptor co-doping by using an ALD technology in a zinc oxide thin film generating process. The present invention has a simple preparation process, deposition and doping processes are easy to control, and the prepared co-doped zinc oxide thin film facilitates p-type doping of the zinc oxide thin film and improves stability of p-type electrical property.