| 摘要 |
The present invention relates to a substrate processing apparatus and more specifically, to a substrate processing apparatus by using plasma. The substrate processing apparatus according to an embodiment of the present invention includes: a housing having a process space in the inside; a support member arranged inside the housing and for supporting the substrate; a gas supply unit for supplying gas to the inner part of the housing; and a baffle unit arranged to cover a plasma source generating plasma from the gas supplied to the inner part of the housing and the support member inside the housing and having baffles in which through-holes are formed to discharge the gas inside the process space. The baffle is divided into a plurality of regions when it is looked at the top. One part of the regions is provided to a metallic material. The other part is provided to a non-metallic material. |
