| 摘要 |
The present invention provides an array substrate including: a gate wire extending in one direction on a substrate in which a pixel area is defined; a gate electrode connected to the gate wire; a gate insulation film formed on the gate wire and the gate electrode; an oxide semiconductor layer formed on the gate insulation film to expose opposite ends of the gate insulation film in correspondence to the gate electrode; an etch stopper having a contact hole for exposing opposite ends of the oxide semiconductor layer to the upper side of the oxide semiconductor layer and formed on a front surface of the oxide semiconductor layer; a data wire formed on the etch stopper to define the pixel area while crossing the gate wire, a source electrode and a drain electrode spaced apart from each other while the oxide semiconductor layer is interposed therebetween, and pixel electrodes formed for the pixel areas while contacting the drain electrode; a first protective layer including a second contact hole completely overlapping the first contact hole on the data wire, the pixel electrode, the source electrode, and the drain electrode and having a size larger than that of the first contact hole to exposed ends of the source electrode and the drain electrode facing opposite ends of the oxide semiconductor layer and opposite ends of the oxide semiconductor layer while being adjacent to the opposite ends of the oxide semiconductor layer and the opposite ends of the oxide semiconductor layer, and formed on a front surface thereof; and a connection pattern formed in the interior of the second contact hole while contacting the oxide semiconductor layer and the source electrode, and the oxide semiconductor layer and the drain electrode at the same time, and a method of fabricating the same. |
