| 摘要 |
<p>The aim of the invention is to improve a generally known method for producing quartz glass doped with fluorine, wherein SiO2 particles are formed in the presence of fluorine by means of a plasma deposition process, deposited in layers on an outer envelope of a cylindrical quartz glass substrate body rotating about its longitudinal axis, and vitrified to form a layer of quartz glass with a fluorine content of at least 1.5 wt. %, in such a way that a quartz glass semifinished product with a high fluorine content, characterised by a high basic transmission in the UV wavelength range, is obtained. To this end, the substrate body has at least one reservoir layer of quartz glass at least in the region of the outer envelope thereof, having a minimum hydroxyl group content of 200 wt. ppm and/or a minimum hydrogen content of 1×1017 molecules/cm3, and the substrate body is either fully or partially removed following the deposition of the quartz glass layer doped with fluorine.</p> |
