发明名称 |
Control circuit and method for controlling a high-performance semiconductor switch |
摘要 |
The driving circuit has a semiconductor device which is operated in breakdown in response to exceedance of collector-emitter voltage of a power semiconductor switch (S). An output section of the semiconductor device is connected through a conductive interconnect (100) to a terminal (300) between the resistors (RVCE2,RVCE3) of a resistor series circuit. The breakdown voltage of the semiconductor device is selected, such that potential at the output of the semiconductor device is greater than potential at a gate of the power semiconductor switch. An independent claim is included for method for driving power semiconductor switch. |
申请公布号 |
EP2744110(A1) |
申请公布日期 |
2014.06.18 |
申请号 |
EP20130197268 |
申请日期 |
2011.03.16 |
申请人 |
CT-CONCEPT HOLDING GMBH |
发明人 |
THALHEIM, JAN;GARCIA, OLIVIER |
分类号 |
H03K17/082 |
主分类号 |
H03K17/082 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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