Method for contacting a semiconductor element by welding a contact element to a sintered layer on the semiconductor element and semiconductor component with increased stability against thermomechanical influence

摘要

The method involves applying a sintering material in a connecting region between a top surface of a semi-conductor material (1) and a contact element (7). The pressure-free sintering is performed to form a sintered weldable layer (2) on the top surface of the semiconductor material. The formed sintered weldable layer is loaded with the contact element. A pressure-free formation of a material bond is carried out by a laser welding, and an electrical contact between the top surface of the semiconductor material and the contact element is possible. An independent claim is included for a semiconductor device.