发明名称 |
Light-emitting device with head-to-tail p-type and n-type transistors, and manufacturing method |
摘要 |
<p>The device has a transistor equipped with source zones (103a) and drain zones (103b) formed in an N-doped semiconductor zone and a gate (106). Another transistor is equipped with source and drain zones formed in P-doped semiconductor zone (113) and another gate. The gates of the two transistors are placed opposite to each other on sides of a semiconductor zone (101) including a determined region (101c) containing an intrinsic or non-doped semiconductor material. The region includes a direct bandgap material. An independent claim is also included for a method for realizing a microelectronic light radiation emitting device.</p> |
申请公布号 |
EP2592663(B1) |
申请公布日期 |
2014.06.18 |
申请号 |
EP20120191232 |
申请日期 |
2012.11.05 |
申请人 |
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIESALTERNATIVES |
发明人 |
GRENOUILLET, LAURENT;VINET, MAUD |
分类号 |
H01L33/00;H01L27/15 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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