| 摘要 |
Provided is an optical semiconductor element wherein an i-type Si semiconductor layer is arranged between an n-type Si semiconductor layer or a p-type Si semiconductor layer and an i-type SixGe1-x semiconductor layer (0=x=0.6), namely, the optical semiconductor element wherein the p-type Si semiconductor layer, the i-type SixGe1-x semiconductor layer (0=x=0.6), the i-type Si semiconductor layer, and the n-type Si semiconductor layer are sequentially laminated or alternatively, the optical semiconductor element wherein the n-type Si semiconductor layer, the i-type SixGe1-x semiconductor layer (0=x=0.6), the i-type Si semiconductor layer, and the p-type Si semiconductor layer are sequentially laminated. |
