| 摘要 |
<p>The equipment for growing a sapphire single crystal is capable of easily improving shape accuracy and positioning accuracy of a thermal shield which influence temperature distribution in a growth furnace. The thermal shield is provided in the growth furnace and encloses the cylindrical heater so as to form a hot zone. The thermal shield is constituted by a plurality of cylindrical sections, which are vertically stacked and whose radial positions are defined by a positioning mechanism. The cylindrical sections are composed of carbon felt.</p> |
