| 摘要 |
<p>A heat treatment apparatus is provided which includes heating means for enabling a rapid temperature rise to a temperature of 1600 through 1900°C, and a thermometer capable of accurately measuring temperatures even when rapid temperature rises and drops are repeated, the heat treatment apparatus being capable of performing heat treatment of an SiC substrate with good mass productivity after ion implantation. The heat treatment apparatus 1 enables the heat treatment of a semiconductor substrate at 1600 to 1900°C by temperature control using a resistance heating element 7 and thermocouple thermometers 8a, 8b. The heat treatment apparatus 1 is configured such that the resistance heating element 7 and the thermocouple thermometers 8a, 8b include a common constituent metal as a main component.</p> |
