Polycrystalline silicon thin layers produced by titanium-supported metal-induced layer exchange

摘要

#CMT# #/CMT# The method involves applying a layer sequence on a substrate, where the layer sequence has an oxidation layer arranged between an output layer and an activator layer. The layer sequence is treated with heat for forming a polycrystalline end layer, and the stable oxidation layer is produced by oxidation of transition metals during heat treatment. The oxidation layer is made of titanium oxide, the activator layer is made of silver and the output material is made of semiconductor material such as silicon and germanium. #CMT# : #/CMT# An independent claim is also included for a device for converting radiations into electric energy. #CMT#USE : #/CMT# Method for manufacturing a polycrystalline layer i.e. crystalline silicon-germanium thin layer, of an electronic component i.e. thin solar cell. Can also be used for a display. #CMT#ADVANTAGE : #/CMT# The utilization of the titanium oxide for manufacturing the oxidation layer precisely increases nucleation energy during aluminum induced layer exchange (ALILE) process, thus increasing crystallite of the polycrystalline layer during the ALILE process, and hence maintaining process duration of the polycrystalline layer manufacturing method. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a cross sectional representation illustrating a polycrystalline layer manufacturing method.'(Drawing includes a non-English text)'.