| 摘要 |
The invention relates to a method for producing smooth III-N, particularly smooth III-N substrate or III-N template, III meaning at least one element from group III of the periodic table selected among Al, Ga, and In. A smoothing means comprises cubic boron nitride as an abrasive particle. Said method makes it possible to create large-area III-N substrates or III-N templates that have a minimum diameter of 40 mm with a homogeneous very low surface roughness across the entire surface of the substrate or wafer. For example, the standard deviation of the rms values is 5 percent or less when the wafer surface is mapped by means of a white light interferometer. Said property can be obtained along with very good crystal quality on the surface or in areas near the surface, said quality being measured by means of rocking curve mapping and/or micro-Raman mapping, for example. |
