METHOD OF GRAWING GALLIUM NITRIDE BASED SEMICONDUCTOR LAYERS AND METHOD OF FABRICATING LIGHT EMITTING DEVICE THEREWITH

摘要

Disclosed are a method of growing a gallium nitride based semiconductor layer and a method of fabricating a semiconductor device. The method of growing a gallium nitride based semiconductor layer is a method of growing a gallium nitride semiconductor layer using an organic metal chemical vapor deposition technology, and comprises the steps of: loading a growth substrate in a chamber; growing a first conductive gallium nitride based semiconductor layer on a substrate in a first chamber pressure; growing a gallium nitride base active layer in a second chamber pressure higher than the first chamber pressure on the first conductive gallium nitride based semiconductor layer; and growing a second conductive gallium nitride based semiconductor layer in a third chamber pressure lower than the second chamber pressure on the active layer. Interface characteristics of a wall layer and a barrier layer in an active layer can be improved and process time can be shortened by growing the active layer in a relatively high pressure.