| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor improvable in reliability by suppressing the deterioration of electric characteristics. SOLUTION: In the thin-film transistor 1, a gate electrode 12 and an oxide semiconductor film 14 forming a channel 14A are provided on a substrate 11 with a gate insulating film 13 sandwiched therebetween, and a source electrode 16A and a drain electrode 16B are disposed so as to contact with the oxide semiconductor film 14. The source electrode 16A and the drain electrode 16B are formed so that a first metal layer 161, a second metal layer 162 and a third metal layer 163 are stacked from the side of the oxide semiconductor film 14. The first metal layer 161 is composed of a metal having ionization energy equal to or higher than that of molybdenum. In the thin-film transistor, since the first metal layer 161 contacting with the oxide semiconductor film 14 is hardly oxidized, oxygen is hardly taken from the oxide semiconductor film 14 into the first metal layer 161 as compared to the case of using an easily oxidizable metal. The generation of carriers caused by a loss of oxygen in the oxide semiconductor film 14 is suppressed. COPYRIGHT: (C)2011,JPO&INPIT |
