| 摘要 |
An exposure mask has a rectangular pattern, an auxiliary pattern, a translucent region, and a shielding region. The rectangular pattern includes a transparent region having a dimension equal to or greater than a critical resolution of exposure light. The auxiliary pattern is arranged around the rectangular pattern and includes a transparent region having a dimension smaller than the critical resolution. The translucent region is arranged between the rectangular pattern and the auxiliary pattern for shifting a phase of light transmitted through the rectangular pattern and the auxiliary pattern to an opposite phase. The shielding region is arranged around the auxiliary pattern. |
