发明名称 METHODS OF FORMING GRAPHENE-CONTAINING SWITCHES
摘要 <p>Some embodiments include methods of forming graphene-containing switches. A bottom electrode may be formed over a base, and a first electrically conductive structure may be formed to extend upwardly from the bottom electrode. Dielectric material may be formed along a sidewall of the first electrically conductive structure, while leaving a portion of the bottom electrode exposed. A graphene structure may be formed to be electrically coupled with the exposed portion of the bottom electrode. A second electrically conductive structure may be formed on an opposing side of the graphene structure from the first electrically conductive structure. A top electrode may be formed over the graphene structure and electrically coupled with the second electrically conductive structure. The first and second electrically conductive structures may be configured to provide an electric field across the graphene structure.</p>
申请公布号 EP2742530(A2) 申请公布日期 2014.06.18
申请号 EP20120817419 申请日期 2012.06.27
申请人 MICRON TECHNOLOGY, INC. 发明人 SANDHU, GURTEJ, S.
分类号 H01L29/778;H01L21/336;H01L23/525;H01L23/532;H01L29/06;H01L29/16;H01L29/786 主分类号 H01L29/778
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