摘要 |
Chemical mechanical polishing slurry is provided to minimize micro scratch in manufacturing an integrated semiconductor by removing macro particles from abrasive particles, and to improve polishing rate and polishing selectivity. A method for manufacturing chemical mechanical polishing slurry comprises the steps of: (S100) mixing abrasive particles, solvent and dispersing agent to prepare a mixture for producing slurry; (S110) milling a mixture for producing the slurry; (S120); filtering the mixture for producing the milled slurry; inputting the mixture for producing the filtered slurry in an aging vessel; (S130) aging the mixture for producing the slurry; and (S140) rotating the aged vessel. |