发明名称 |
Stacked packages having through hole vias |
摘要 |
Provided is a method of forming a package-on-package. An encapsulation is formed to cover a wafer using a wafer level molding process. The wafer includes a plurality of semiconductor chips and a plurality of through silicon vias (TSVs) passing through the semiconductor chips. The encapsulant may have openings aligned with the TSVs. The encapsulant and the semiconductor chips are divided to form a plurality of semiconductor packages. Another semiconductor package is stacked on one selected from the semiconductor packages. The other semiconductor package is electrically connected to the TSVs. |
申请公布号 |
US8754515(B2) |
申请公布日期 |
2014.06.17 |
申请号 |
US201213614931 |
申请日期 |
2012.09.13 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Kim Tae-Hun;Park Jin-Woo;Choi Dae-Young;Kim Mi-Yeon;Lee Sun-Hye |
分类号 |
H01L23/02;H01L21/00;H01L25/065;H01L25/10;H01L25/00;H01L21/78;H01L23/48;H01L23/00;H01L23/31 |
主分类号 |
H01L23/02 |
代理机构 |
Harness, Dickey & Pierce, P.L.C. |
代理人 |
Harness, Dickey & Pierce, P.L.C. |
主权项 |
1. A semiconductor package, comprising:
a first semiconductor package, the first semiconductor package including a first semiconductor chip having a plurality of through silicon vias (TSVs) extending therethrough, a plurality of internal connection terminals in a form of a conductive bump or a solder ball on the plurality of TSVs, and an encapsulant on the first semiconductor chip and the plurality of internal connection terminals, the encapsulant including a plurality of openings corresponding to the plurality of interconnection terminals; and a second semiconductor package on the first semiconductor package, the second semiconductor package including a second semiconductor chip and a plurality of external connection terminals, the plurality of—external connection terminals protruding into the openings to electrically connect the first semiconductor chip to the second semiconductor chip, wherein a sidewall of the encapsulant is coplanar with a sidewall of the first semiconductor chip.
|
地址 |
Gyeonggi-Do KR |