发明名称 Stacked packages having through hole vias
摘要 Provided is a method of forming a package-on-package. An encapsulation is formed to cover a wafer using a wafer level molding process. The wafer includes a plurality of semiconductor chips and a plurality of through silicon vias (TSVs) passing through the semiconductor chips. The encapsulant may have openings aligned with the TSVs. The encapsulant and the semiconductor chips are divided to form a plurality of semiconductor packages. Another semiconductor package is stacked on one selected from the semiconductor packages. The other semiconductor package is electrically connected to the TSVs.
申请公布号 US8754515(B2) 申请公布日期 2014.06.17
申请号 US201213614931 申请日期 2012.09.13
申请人 Samsung Electronics Co., Ltd. 发明人 Kim Tae-Hun;Park Jin-Woo;Choi Dae-Young;Kim Mi-Yeon;Lee Sun-Hye
分类号 H01L23/02;H01L21/00;H01L25/065;H01L25/10;H01L25/00;H01L21/78;H01L23/48;H01L23/00;H01L23/31 主分类号 H01L23/02
代理机构 Harness, Dickey & Pierce, P.L.C. 代理人 Harness, Dickey & Pierce, P.L.C.
主权项 1. A semiconductor package, comprising: a first semiconductor package, the first semiconductor package including a first semiconductor chip having a plurality of through silicon vias (TSVs) extending therethrough, a plurality of internal connection terminals in a form of a conductive bump or a solder ball on the plurality of TSVs, and an encapsulant on the first semiconductor chip and the plurality of internal connection terminals, the encapsulant including a plurality of openings corresponding to the plurality of interconnection terminals; and a second semiconductor package on the first semiconductor package, the second semiconductor package including a second semiconductor chip and a plurality of external connection terminals, the plurality of—external connection terminals protruding into the openings to electrically connect the first semiconductor chip to the second semiconductor chip, wherein a sidewall of the encapsulant is coplanar with a sidewall of the first semiconductor chip.
地址 Gyeonggi-Do KR