| 发明名称 | Thinned wafer and fabricating method thereof | ||
| 摘要 | A thinning method of a wafer is provided. The method includes the following steps. First, a wafer having a first surface, a second surface, and a side surface is provided, and the side surface is connected between the first surface and the second surface. At least one semiconductor device is formed on the first surface. Then, an anisotropy etching process is performed to the second surface with a mask to remove portions of the wafer while remaining the side surface thereby forming a number of grooves in the second surface and at least one reinforcing wall between the grooves. As a result, a thinned wafer is obtained. | ||
| 申请公布号 | US8754504(B2) | 申请公布日期 | 2014.06.17 |
| 申请号 | US201213478223 | 申请日期 | 2012.05.23 |
| 申请人 | United Microelectronics Corporation | 发明人 | Hsu Chang-Sheng;Yang Kuo-Yuh;Huang Kuo-Hsiung;Chen Yan-Da;Lien Chia-Wen |
| 分类号 | H01L29/06 | 主分类号 | H01L29/06 |
| 代理机构 | WPAT, PC | 代理人 | WPAT, PC ;King Justin |
| 主权项 | 1. A thinning method of a wafer, the method comprising: providing a wafer having a first surface, a second surface and a side surface connected between the first surface and the second surface, a semiconductor device being formed on the first surface; and performing an anisotropy etching process to the second surface with a mask such that portions of the wafer are removed while the side surface is remained, the anisotropy etching process forming a plurality of grooves in the second surface, and at least one reinforcing wall being formed between the grooves, wherein a bottom region of the grooves covers a scribe line defined in the wafer. | ||
| 地址 | Hsinchu TW | ||