| 发明名称 | Low on-resistance power transistor having transistor stripes | ||
| 摘要 | A power transistor and a power converter are disclosed that may improve the on-resistance and corresponding silicon area of a power transistor. The power transistor may comprise a drain, a source, and a channel therebetween divided into a plurality of transistor stripes, the plurality of transistor stripes being grouped in a plurality of different groups. The power transistor may further comprise a first top metal associated with one of the drain and the source, and a second top metal associated with the other of the drain and the source. The second top metal includes at least one portion that is coupled to different groups of transistor stripes. A related method for determining a layout topology of a power transistor is also disclosed. | ||
| 申请公布号 | US8754480(B2) | 申请公布日期 | 2014.06.17 |
| 申请号 | US201113048726 | 申请日期 | 2011.03.15 |
| 申请人 | Integrated Device Technology, Inc. | 发明人 | Barrow Jeffrey G. |
| 分类号 | H01L21/70 | 主分类号 | H01L21/70 |
| 代理机构 | Traskbritt P.C. | 代理人 | Traskbritt P.C. |
| 主权项 | 1. An apparatus, comprising: a first power transistor, comprising: a drain, a source, and a channel therebetween divided into a plurality of transistor stripes, the plurality of transistor stripes being grouped in a plurality of different groups;a first top metal associated with one of the drain and the source; anda second top metal associated with the other of the drain and the source, wherein the second top metal includes at least one portion that is coupled to different groups of transistor stripes. | ||
| 地址 | San Jose CA US | ||