发明名称 |
Organic thin-film transistor, method of manufacturing organic thin-film transistor, and display |
摘要 |
An organic thin-film transistor includes: a semiconductor layer made of an organic material; a gate electrode; a source electrode and a drain electrode each at least partially provided above the semiconductor layer; and a conductive layer containing an oxide having conductivity that changes due to reduction, the conductive layer being provided in each of a first region and a second region facing the source electrode and the drain electrode provided above the semiconductor layer, respectively. |
申请公布号 |
US8754478(B2) |
申请公布日期 |
2014.06.17 |
申请号 |
US201213618839 |
申请日期 |
2012.09.14 |
申请人 |
Sony Corporation |
发明人 |
Ushikura Shinichi |
分类号 |
H01L27/12;H01L21/20 |
主分类号 |
H01L27/12 |
代理机构 |
K&L Gates LLP |
代理人 |
K&L Gates LLP |
主权项 |
1. An organic thin-film transistor comprising:
a semiconductor layer made of an organic material; a gate electrode, a source electrode, and a drain electrode; and an oxide layer provided between the source electrode as well as the drain electrode and the semiconductor layer, the oxide layer exhibiting conductivity in a first region and a second region facing the source electrode and the drain electrode, respectively, and the oxide layer exhibiting insulation in a third region between the first region and the second region.
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地址 |
Tokyo JP |