发明名称 Organic thin-film transistor, method of manufacturing organic thin-film transistor, and display
摘要 An organic thin-film transistor includes: a semiconductor layer made of an organic material; a gate electrode; a source electrode and a drain electrode each at least partially provided above the semiconductor layer; and a conductive layer containing an oxide having conductivity that changes due to reduction, the conductive layer being provided in each of a first region and a second region facing the source electrode and the drain electrode provided above the semiconductor layer, respectively.
申请公布号 US8754478(B2) 申请公布日期 2014.06.17
申请号 US201213618839 申请日期 2012.09.14
申请人 Sony Corporation 发明人 Ushikura Shinichi
分类号 H01L27/12;H01L21/20 主分类号 H01L27/12
代理机构 K&L Gates LLP 代理人 K&L Gates LLP
主权项 1. An organic thin-film transistor comprising: a semiconductor layer made of an organic material; a gate electrode, a source electrode, and a drain electrode; and an oxide layer provided between the source electrode as well as the drain electrode and the semiconductor layer, the oxide layer exhibiting conductivity in a first region and a second region facing the source electrode and the drain electrode, respectively, and the oxide layer exhibiting insulation in a third region between the first region and the second region.
地址 Tokyo JP