Three-dimensional semiconductor architecture

摘要

A system and method for making semiconductor die connections with through-silicon vias (TSVs) are disclosed. TSVs are formed through the substrate to allow for signal connections as well as power and ground connections. In one embodiment this allows these connections to be made throughout the substrate instead of on the periphery of the substrate. In another embodiment, the TSVs are used as part of a power matrix to supply power and ground connections to the active devices and metallization layers through the substrate.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
manufacturing a plurality of active devices at least partially within a first side of a substrate, the substrate having a peripheral region and an interior region surrounded by the peripheral region; forming a first set of conductive vias entirely through the substrate in the peripheral region; and forming a second set of conductive vias entirely through the substrate in the interior region, wherein the second set of conductive vias are part of a power matrix.