| 发明名称 | Changing effective work function using ion implantation during dual work function metal gate integration | ||
| 摘要 | Ion implantation to change an effective work function for dual work function metal gate integration is presented. One method may include forming a high dielectric constant (high-k) layer over a first-type field effect transistor (FET) region and a second-type FET region; forming a metal layer having a first effective work function compatible for a first-type FET over the first-type FET region and the second-type FET region; and changing the first effective work function to a second, different effective work function over the second-type FET region by implanting a species into the metal layer over the second-type FET region. | ||
| 申请公布号 | US8753936(B2) | 申请公布日期 | 2014.06.17 |
| 申请号 | US200812190220 | 申请日期 | 2008.08.12 |
| 申请人 | International Business Machines Corporation | 发明人 | Chudzik Michael P.;Frank Martin M.;Ho Herbert L.;Hurley Mark J.;Jha Rashmi;Moumen Naim;Narayanan Vijay;Park Dae-Gyu;Paruchuri Vamsi K. |
| 分类号 | H01L21/8234 | 主分类号 | H01L21/8234 |
| 代理机构 | Hoffman Warnick LLC | 代理人 | Petrokaitis Joseph J.;Hoffman Warnick LLC |
| 主权项 | 1. A method comprising: forming a high dielectric constant (high-k) layer over a first-type field effect transistor (FET) region and a second-type FET region; forming a single metal layer having a first effective work function compatible for a first-type FET over the first-type FET region and the second-type FET region; and changing the first effective work function to a second, different effective work function over the second-type FET region by implanting an aluminum (Al) species into the single metal layer over the second-type FET region, wherein the changing results in a greater than 50 milli-Volt shift in a threshold voltage of the second-type FET and wherein the aluminum species diffuses into the high dielectric constant layer. | ||
| 地址 | Armonk NY US | ||