| 摘要 |
The present invention relates to a semiconductor memory device and a read operation method thereof. The semiconductor memory device according to an embodiment of the present invention includes a page buffer configured to include a sense latch connected to a memory cell through a bit line and to store data read from the memory cell by pre-sensing in the sense latch; and a control logic configured to control the page buffer. In main sensing, the page buffer forms a current path between the sense latch and the bit line and reflects the data stored in the sense latch by pre-sensing on the bit line. |
