Maskless exposure apparatus and method to determine exposure start position and orientation in maskless lithography

摘要

According to an example embodiment, a method to determine an exposure start position and orientation includes loading a substrate on a moving table. The substrate includes at least one alignment mark of a first set of alignment marks of a first pattern layer patterned thereon. At least one alignment mark of a second set of alignment marks of a second pattern layer is exposed on the substrate using maskless lithography. A position of the at least one alignment mark of the first set of alignment marks and a position of the at least one alignment mark of the second set of alignment marks on the substrate is measured. A relative orientation difference between a desired exposure start orientation and an obtained exposure start orientation is acquired using the measured positions of the at least one alignment mark of the first set of alignment marks and the at least one alignment mark of the second set of alignment marks. A relative position difference between a desired exposure start position and an obtained start position is acquired using the measured positions of the at least one alignment mark of the first set of alignment marks and the at least one alignment mark of the second set of alignment marks. An exposure start position and orientation compensated using the relative position difference and the relative orientation difference is determined.

主权项

1. A method to determine an exposure start position and orientation comprising:
loading a substrate, on which is patterned at least one alignment mark of a first set of alignment marks of a first pattern layer, on a moving table; exposing the substrate, using maskless lithography, to form at least one alignment mark of a second set of alignment marks of a second pattern layer on the substrate; measuring a position of the at least one alignment mark of the first set of alignment marks and a position of the at least one alignment mark of the second set of alignment marks on the substrate; acquiring a relative orientation difference between a desired exposure start orientation and an obtained exposure start orientation using the measured positions of the at least one alignment mark of the first set of alignment marks and the at least one alignment mark of the second set of alignment marks; acquiring a relative position difference between a desired exposure start position and an obtained exposure start position using the measured positions of the at least one alignment mark of the first set of alignment marks and the at least one alignment mark of the second set of alignment marks; determining an exposure start position and orientation compensated using the relative position difference and the relative orientation difference; compensating for the exposure start orientation of the substrate using the relative orientation difference; repeatedly loading and exposing the substrate after compensating for the exposure start orientation of the substrate; and measuring a position of the at least one alignment mark of the first set of alignment marks and a position of the at least one alignment mark of the second set of alignment marks on the substrate after completion of the repeated exposure of the substrate.