Light-emitting element and the manufacturing method thereof

摘要

A light-emitting element includes a light-emitting stack includes: a first semiconductor layer; an active layer formed on the first semiconductor layer; and a second semiconductor layer formed on the active layer; a recess structure formed through the second semiconductor layer, the active layer, and extended in the first semiconductor layer, wherein the first semiconductor layer includes a contact region defined by the recess structure; a first electrode structure including a first contact portion on the contact region of the first semiconductor layer, and a second contact portion laterally extended from the first contact portion into the first semiconductor layer; and a dielectric layer formed on side surfaces of the second semiconductor layer and the active layer to insulate the second semiconductor layer and the active layer from the first contact portion.

主权项

1. A light-emitting element comprising:
a light-emitting stack comprising an upper surface and a lower surface opposite to the upper surface; a recess structure penetrating the upper surface, and comprising a first bottom surface in the light-emitting stack and a first side surface connected between the upper surface and the first bottom surface; a first electrode structure comprising a second bottom surface electrically connected to the first bottom surface, and a second side surface facing the first side surface; and a dielectric layer formed between the first side surface and the second side surface, wherein the first electrode structure is entirely between the upper surface and the lower surface of the light-emitting stack.