Line width roughness improvement with noble gas plasma

摘要

A method for forming a photoresist mask may comprise providing a ultra-violet (UV) producing gas to a vacuum chamber having a substrate, ionizing the UV producing gas to produce UV rays to irradiate the substrate, and etching features into the substrate through the photoresist mask.

主权项

1. A method for etching features in an etch layer over a substrate and disposed below a photoresist mask, comprising:
placing the substrate into a vacuum chamber; providing a high-intensity vacuum ultra-violet (VUV) producing gas comprising argon gas into the vacuum chamber; ionizing the argon gas to produce VUV rays to irradiate the photoresist mask which reduces the line width roughness of the photoresist mask; and etching features into the etch layer through the photoresist mask.