Light emitting device and light emitting device package

摘要

A light emitting device is disclosed. The light emitting device includes a first conductive type semiconductor layer, an active layer disposed on the first conductive type semiconductor layer, a tunnel junction layer comprising a second conductive type nitride semiconductor layer and a first conductive type nitride semiconductor layer disposed on the active layer, wherein the first conductive type nitride semiconductor layer and the second conductive type nitride semiconductor layer are PN junctioned, a first electrode disposed on the first conductive type semiconductor layer, and a second electrode disposed on the first conductive type nitride semiconductor layer, wherein a portion of the second electrode is in schottky contact with the second conductive type nitride semiconductor layer through the first conductive type nitride semiconductor layer.

主权项

1. A light emitting device comprising:
a first conductivity type semiconductor layer doped with a first conductivity type dopant; an active layer disposed on the first conductivity type semiconductor layer; a tunnel junction layer including a second conductivity type nitride semiconductor layer disposed on the active layer and a first conductivity type nitride semiconductor layer disposed on the second conductivity type nitride semiconductor layer, wherein the first conductivity type nitride semiconductor layer and the second conductivity type nitride semiconductor layer are PN junctioned; a first electrode disposed on the first conductivity type semiconductor layer; and a second electrode disposed on the first conductivity type nitride semiconductor layer, wherein a portion of the second electrode is in schottky contact with the second conductivity type nitride semiconductor layer through the first conductivity type nitride semiconductor layer, wherein the second electrode comprises:
a first contact portion in ohmic contact with an upper surface of the first conductivity type nitride semiconductor layer and a through portion of the first conductivity type nitride semiconductor layer; anda second contact portion in schottky contact with the second conductivity type nitride semiconductor layer.