发明名称 |
MULTI JUNCTIONS IN A SEMICONDUCTOR DEVICE FORMED BY DIFFERENT DEPOSITION TECHNIQUES |
摘要 |
<p>A semiconductor device, in particular a solar cell is formed on the basis of a hybrid deposition strategy using MOCVD and MBE in order to provide lattice matched semiconductor compounds. To this end, the MBE may be applied for providing a nitrogen-containing semiconductor compound that allows a desired low band gap energy and a lattice matched configuration with respect to gallium arsenide substrates.</p> |
申请公布号 |
KR20140074338(A) |
申请公布日期 |
2014.06.17 |
申请号 |
KR20147009324 |
申请日期 |
2012.10.08 |
申请人 |
SOITEC |
发明人 |
KRAUSE RAINER;GHYSELEN BRUNO |
分类号 |
H01L31/0687;H01L21/02;H01L21/203;H01L21/205;H01L31/0304;H01L31/0693;H01L31/18 |
主分类号 |
H01L31/0687 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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