Semiconductor device and manufacturing method thereof

摘要

A semiconductor device includes a supporting substrate; a semiconductor substrate that includes a first surface in which at least one layer is formed and a second surface that is positioned on an opposite side to the first surface, and is pasted to a surface of the supporting substrate with adhesive such that the first surface faces the supporting substrate side; a protective film that is formed on the second surface of the semiconductor substrate and on a surface of the adhesive extending outwardly from a region between the supporting substrate and the semiconductor substrate, and including a perimeter part that is positioned outside a perimeter part of the adhesive, and positioned inside a perimeter part of the supporting substrate; and an electrode material that is formed so as to be embedded in a penetration hole that penetrates the protective film and the semiconductor substrate.

主权项

1. A semiconductor device, comprising:
a supporting substrate; a semiconductor substrate having a first surface upon which one or more device layers are formed and a second surface opposed to said first surface; an adhesive interposed between the supporting substrate and the semiconductor substrate, and forming an adhering layer to adhere the supporting substrate to the semiconductor substrate, wherein the first surface of the semiconductor substrate faces the supporting substrate, and the adhesive extends outwardly from the edge of the semiconductor substrate and exists on the surface of the support substrate adjacent to the edge of the semiconductor substrate; and
a protective film formed on the second surface of the semiconductor substrate and on a surface of the adhesive extending outwardly from the edge of the semiconductor substrate and existing on the surface of the support substrate adjacent to the edge of the semiconductor substrate, andthe protective film extending outwardly from the edge of the semiconductor substrate and terminating at a location that is located outwardly of the extent of the adhesive extending outwardly from the edge of the semiconductor substrate; and an electrode material that is formed so as to be embedded in a penetration hole that penetrates the protective film and the semiconductor substrate through the second surface thereof.