发明名称 |
Wafer-level interconnect for high mechanical reliability applications |
摘要 |
An interconnect structure comprises a solder including nickel (Ni) in a range of 0.01 to 0.20 percent by weight. The interconnect structure further includes an intermetallic compound (IMC) layer in contact with the solder. The IMC layer comprises a compound of copper and nickel. |
申请公布号 |
US8754524(B2) |
申请公布日期 |
2014.06.17 |
申请号 |
US201213397876 |
申请日期 |
2012.02.16 |
申请人 |
FlipChip International, LLC |
发明人 |
Curtis Anthony;Burgess Guy F.;Johnson Michael;Tessier Ted;Lu Yuan |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
Greenberg Traurig, LLP |
代理人 |
Greenberg Traurig, LLP |
主权项 |
1. An interconnect structure positioned between two electrical contacts including a first metal contact and a second metal contact, the interconnect structure comprising:
a solder alloy comprising nickel (Ni) and tin (Sn), wherein the nickel (Ni) is in a range of 0.01 to 0.20 percent by weight (wt %); and an intermetallic compound (IMC) layer having a top surface in contact with the solder alloy and a bottom surface in contact with the first metal contact, the IMC layer comprising a compound of copper and nickel.
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地址 |
Phoenix AZ US |