发明名称 Wafer-level interconnect for high mechanical reliability applications
摘要 An interconnect structure comprises a solder including nickel (Ni) in a range of 0.01 to 0.20 percent by weight. The interconnect structure further includes an intermetallic compound (IMC) layer in contact with the solder. The IMC layer comprises a compound of copper and nickel.
申请公布号 US8754524(B2) 申请公布日期 2014.06.17
申请号 US201213397876 申请日期 2012.02.16
申请人 FlipChip International, LLC 发明人 Curtis Anthony;Burgess Guy F.;Johnson Michael;Tessier Ted;Lu Yuan
分类号 H01L23/48 主分类号 H01L23/48
代理机构 Greenberg Traurig, LLP 代理人 Greenberg Traurig, LLP
主权项 1. An interconnect structure positioned between two electrical contacts including a first metal contact and a second metal contact, the interconnect structure comprising: a solder alloy comprising nickel (Ni) and tin (Sn), wherein the nickel (Ni) is in a range of 0.01 to 0.20 percent by weight (wt %); and an intermetallic compound (IMC) layer having a top surface in contact with the solder alloy and a bottom surface in contact with the first metal contact, the IMC layer comprising a compound of copper and nickel.
地址 Phoenix AZ US